Memristive operation mode of a site-controlled quantum dot floating gate transistor
|Title||Memristive operation mode of a site-controlled quantum dot floating gate transistor|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Maier P., Hartmann F, Mauder T., Emmerling M., Schneider C., Kamp M, Höfling S., Worschech L|
|Journal||Applied Physics Letters|
We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinchedhysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by chargelocalization and Coulomb coupling.