Memristive operation mode of a site-controlled quantum dot floating gate transistor

TitleMemristive operation mode of a site-controlled quantum dot floating gate transistor
Publication TypeJournal Article
Year of Publication2015
AuthorsMaier P., Hartmann F, Mauder T., Emmerling M., Schneider C., Kamp M, Höfling S., Worschech L
JournalApplied Physics Letters
Volume106
Pagination-
Abstract

We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinchedhysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by chargelocalization and Coulomb coupling.

URLhttp://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921061
DOI10.1063/1.4921061
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